Research and estimation of adequacy of the nonlinear thermal models of the powerful bipolar semi-conductor devices

In this article we described the mathematical thermal model of the powerful bipolar semi-conductor device taking into account various mechanisms a thermoelectric feedback, operating in device structure. On its basis thermal models of the powerful bipolar transistor and light-emitting diode are developed. The numerically-analytical iterative method solves system of the modelling equations and distributions of density of a current and temperature of active area of semi-conductor structures are calculated. Good conformity of calculation and experimental dependences of thermal resistance transition-case from value of dissipated power for concrete types of the powerful transistor and a light-emitting diode is received.