The research of the coverer designed for the application of mineral fertilizers while the simultaneously hoeing root crops

The application of mineral fertilizers in the cultivation of agricultural crops has been proven for a very long time. In the process of growing root crops (for example, potatoes), mineral fertilizers are applied several times during the entire period of culture formation. Depending on the stage of development of the root system and the green mass, it is necessary to apply mineral fertilizers of a certain group (nitrogen, potassium, phosphorus). It is also necessary to observe the dosage of application to eliminate undesirable consequences, as well as what fertilizers need to be applied during a certain period of plant growth. There are a lot of mechanisms and working bodies for making meliorants for root crops, they are scattered, intra-soil, you can also make liquid, solid. We have proposed a device that introduces mineral fertilizers during the intensive formation of the potato root system, namely during hoeing. The coverer which can carry out simultaneous application of mineral fertilizers and hilling of root tubers is developed. The article describes the method of simultaneous application of meliorants and hoeing, as well as the design features of the working body and its principle of operation. Disk tools in agriculture are quite common, but their location relative to each other in different planes can radically change the principle and purpose, as well as he angles of inclination and angles of attack of the disks relative to the soil have a great influence. The variety of agricultural implements for hoeing potatoes is large, however, it is very difficult to find such combined, coverer for the purpose set in the study. The step-by-step consideration of the proposed method, which is presented in the article, gives a visual representation of both the problem posed and its solution. The analysis is presented and the study of the angle and the axial distance of the disks to reduce the traction resistance of the coverer is clearly shown.