Electrophysical properties of silicon single crystals in a wide range of temperatures

The study of the electrophysical parameters was carried out on silicon single crystals obtained by the Cz methods (KEF-0.7, KEF-4.5, KEF-7), n- and p-type conductivity, as well as neutron transmutation doping (NTD) in the range temperatures of 300 - 1200K both during heating and when cooling at a rate of -5 K min. Results of investigating the temperature dependences of electrical conductivity for KEF single crystals in the temperature range of 1000K, the sign of the Hall constant changes.