Method of studying the electric conductivity and the hall effect of semiconductors

A technique is presented for studying the electrical conductivity and the Hall effect of semiconductors at temperatures from room temperature to 1600 K. Methodological aspects of measuring galvanomagnetic effects in high-resistance silicon and a technique for detecting inhomogeneity of crystals are considered. The characteristics of the samples under study are given, table. 1, a technique for determining the parameters of defects and impurities that create deep levels in the silicon band gap (DLTS). The oxygen concentration was determined by the method.