High-power laser diodes with emission wave length of 808 nm. II. Non-thermal mechanisms for limiting of radiated power

Автор: Demidov D.M., Ter-martirosyan A.L., Bulashevich K.A., Khokhlev O.V., Karpov S. Yu.

Журнал: Научное приборостроение @nauchnoe-priborostroenie

Рубрика: Обзоры

Статья в выпуске: 4 т.22, 2012 года.

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In the course of work [1] in this article the review of the non-thermal mechanisms limiting the output radiated power of laser diodes is presented. These mechanisms are separated into two groups: one group covers those related to the carriers’ accumulation in the waveguide layers of laser structure at the currents exceeding the threshold value. another group consolidates the mechanisms related to non-equilibrium distribution of electrons and holes in the active area of laser, caused by the significant shortening of carriers life times due to stimulated emission. The competition of thermal and non-thermal mechanisms of the optical power limitation is considered for the pulsed and continuous-wave injection pumping.

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Semiconductor lasers, laser diodes, radiated power, catastrophic optical damage, thermal effects, carriers accumulation, carriers life time, stimulated emission

Короткий адрес: https://sciup.org/14264821

IDR: 14264821

Статья обзорная