The features of monolayer photoresist double exposure for manufacturing of semiconductor devices and photomasks

The article presents an analysis of popular photolithographic methods of the formation of small-size elements on the substrate surface by using of double photoresist exposure obtained by imposing of photoresist layers and masks. The shortcomings of the methods are pointed out. In this connection, an improved scheme of photolithography technological process is suggested. It allows avoiding the shortcomings and obtaining small-size elements of less than 1 mcm.