Realization of deep level transient spectroscopy method in semiconductors on DLS-83D measuring device
Бесплатный доступ
The article describes the deep level transient spectroscopy method. Particularly, it presents the measurement results obtained by the conventional DLTS method on gold doped silicon diodes by using of DLS-83D measuring device.
Dlts
Короткий адрес: https://sciup.org/147248762
IDR: 147248762
Статья научная
