Scribing of semiconductor wafers by wire electrode-tool

In modern microelectronics semiconductors there are key materials in automated computing information and control systems, missiles and spacecraft. To obtain integrated circuits and application in devices the semiconductor wafer is separated into the crystals. Methods of separation of the semiconductor wafer on the crystals is scribing with a diamond cutter, laser light, diamond disc, cutting blade and wire. The use of diamond tools and laser beam contaminates the surface of the pulverized crystals formations, when applied marks formed region with a large number of microcracks, fractures and other defects; in addition to the surface of the crystal drops and pairs of semiconductor material. To remedy these shortcomings of the proposed model of the interaction of the vibrating wire electrode-tool with a surface of a semiconductor in which a flexible tool the form of a sine wave moving along the surface of the semiconductor is taken. Moving the point of contact creates an electrical discharge. Along the line of motion, an area of high mechanical stress, which then occurs the separation of the semiconductor wafer, is formed. The time of contact of the electrodes depends on the speed of wave motion and its form. The correctness of the chosen model is confirmed by experimental data, where as the electrode was applied to copper wire. For the excitation of oscillations of the wire used a vibrator with a frequency of the alternating current. The change of current and voltage in the machining process was recorded by the oscilloscope, determine the time of contact and the length of the traveling wave. Experimental and theoretical data showed good agreement. Wafer scribing wire electrode-tool will reduce the number of discarded crystals.