Temperature dependences for STT-MRAM properties

The aim of this work is to analytically study of the temperature dependent critical device parameters of spin-transfer-torque magnetic random access memory (STT-MRAM) based on experimental studies of the composition of magnetic materials basic properties which make up memory cells. It is shown that although the properties of memory cells can greatly deteriorate depending on the temperature, a reasonable combination of parameters of memory cells and manufacturing processes allows us to create STT-MRAM cells that maintain operability in the required temperature range.