Transport properties in solid solutions RexMn1-xS (Re = Ce, Yb)

The paper describes the materials on the basis of solid solutions CexMn1-xS and YbxMn1-xS, which could potentially be used as sensors, sensor devices, and read-write information. A sharp peak in the electrical resistivity in solid solutions CexMn1-xS is discovered, the temperature is shifted to lower temperatures with increasing cerium concentration. The crossover temperature from the tunnel to the activation conductivity type is found. Anomalies in transport properties are explained by turning octahedral and energy levels shift t2g states of electrons with orbital angular momentum. Shift resistivity high temperature samples CexMn1-xS in the magnetic field for the two formulations and the electrical resistance increase for x = 0.05 in a magnetic field is installed. The growth of the magnetoresistance of the current-voltage characteristics with increasing concentration is found. The dependence of the magnetoresistance of the current is installed. These effects are caused by the change of orbital angular correlations of electrons in a magnetic field. The substitution of manganese ions in YbxMn1-xS rare earth element Yb with variable valence keeps semiconductor type conductivity in the concentration range 0 xMn1-xS have been found to decrease the activation energy. Magnetoresistance change sign from negative to positive when heated in YbxMn1-xS at 0.1 ≤ x ≤ 0.2 is established. The critical temperature above which magnetoresistance disappears is determined.