The influence of amorphous silicon dioxide on growth parameters of spring wheat
Автор: Smirnova Yu.D., Rabinovich G.Yu., Bulycheva V.O.
Журнал: Вестник Красноярского государственного аграрного университета @vestnik-kgau
Рубрика: Агрономия
Статья в выпуске: 6, 2020 года.
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Increased interest in silicon preparations around the worldwide is justified. Its positive effect on the growth of crops under abiotic stress is noted. The aim of the research was to study the effect of amorphous silicon dioxide Kovelos-Sorb on biometric parameters of spring wheat plants when modeling abiotic stresses. Kovelos-Sorb produced by LLC ‘Ecocremniy’, a powder with nanoporous particles ranging in size from 5 to 100 microns, with a SiO2 content of 97 %. Kovelos-Sorb was used to soak the seeds of the culture; 0.05 %, 0.25, 0.5 % aqueous concentrations of the preparation was tested. The seeds were grown in laboratory conditions in plastic containers with prepared sod-podzolic soil of 21 pcs. in each container. The following abiotic stress factors were modeled: insufficient humidity (drought), excessive humidity, and the decrease in the temperature after sowing. The greatest effect of the drug on biometric parameters of spring wheat was noted when using a 0.5 % concentration of Kovelos-Sorb during spring wheat germination under conditions of drought and lowering the temperature after sowing. In modeling droughts the increase the length of seedling was 7.8 %, crude mass by 14.4, dry weight of seedling - 15.0, in terms temperature reduction - 25, 7 and 15 %, respectively compared to the seeds not treated with silicon. In the conditions without stress and at high humidity, the use of amorphous silicon did not contribute to significant increases in biometric indicators. Stronger spring wheat seedlings formed under the influence of amorphous silicon increased plant resistance to simulated abiotic stresses. The use of Kovelos-Sorb as an anti-stress preparation is recommended.
Amorphous silicon dioxide kovelos-sorb, spring wheat, abiotic stresses
Короткий адрес: https://sciup.org/140250662
IDR: 140250662 | DOI: 10.36718/1819-4036-2020-6-71-76