Influence of photoreception CMOS-matrix intrinsic heating on the accuracy measurement of optical radiation spectrum parameters

The principle of action and block diagram of unit for measurement the spectrum parameters of narrow-band optical radiation by means of photoreception CMOS-matrix is described. The effect of image shift in a range of light-emitting diode as a result of intrinsic heating of CMOS-matrix during its work as a part of unit in various modes of radiation exposition and data read-out is experimentally investigated. The received results speak within model of uneven thermal expansion of a crystal of photoreception matrix because of its non-uniform heating when reading shots.