An automatic device for measuring resistivity of the silicon four-point probe method
Автор: Vladimirov V.M., Shepov V.N., Grinin E.F., Sergiy M.E.
Журнал: Сибирский аэрокосмический журнал @vestnik-sibsau
Рубрика: Математика, механика, информатика
Статья в выпуске: 5 (26), 2009 года.
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An automatic device for measuring the resistivity of single-crystalline silicon by means of the four-point probe method has been developed.
Automatic device, single-crystalline silicon, resistivity, four-point probe method
Короткий адрес: https://sciup.org/148176089
IDR: 148176089
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