Analysis of dynamic processes in nanoelectronic structures based on memresistive elements

The emergence of recently a wide range of nanoelectronic components is expanding the possibilities of information and computing systems. First of all, it concerns supercomputers with Petaflopovaya productivity. To achieve such performance on the basis of modern microelectronic devices, computing complexes are created, combining up to 100 thousand processors that consume about 100 megawatts of electrical energy and occupy about 300 square meters. A significant increase in productivity, reduction of energy consumption and a decrease in mass-dimensional indicators can be ensured in the transition from microelectronic to a nanoelectronic element base. For such promising nanoelectronic components include memristors. A memristor (from memory - memory, and resistor-electrical resistance) is a passive element in microelectronics that can change its resistance depending on the charge flowing through it. For a long time, the memristor was considered a theoretical model [7], which cannot be implemented in practice, until the first sample of the element demonstrating the properties of the memristor was created in 2008 by a team of scientists led by R. S. Williams in the research laboratory of Hewlett-Packard. The device does not store charge like a capacitor, does not support magnetic flux like an inductor. The change in the properties of the device is provided by chemical reactions in a thin two-layer film of titanium dioxide (5 nm). One layer of the device film is slightly depleted of oxygen and oxygen vacancies migrate between the layers when the voltage changes. This implementation of the memristor belongs to the class of nanoion devices. The observed phenomenon of hysteresis in the memristor allows it to be used, among other things, as a memory cell [9, 10-15, 20-21]. The already studied properties of memristors allow us to say that on their basis it is possible to create computers of a fundamentally new architecture, significantly exceeding semiconductor ones in performance. Due to the regular structure of intersecting nanowires, memristor fabrication is quite simple, especially in comparison with the complex structure of modern processors based on CMOS technology. As a result, the write / read time in the memristor memory cell does not exceed 5 ns. The number of read / write cycles exceeds 1012, and the storage time of information is more than 10 years. All this suggests that memristor memory will become the only type of computer memory. However, the use of such elements in real-life conditions leads to the fact that the electrical parameters of these devices vary over a wide range. This uncertainty in characteristics complicates circuit analysis and the entire design process for electronic devices that include memristor components. In this regard, the problem of assessing the stability of nanoelectronic structures based on memresistive elements under conditions of uncertain external influences is urgent.