Equilibrium distribution of defects in cadmium telluride before exposure to external factors
Автор: Paklin N.N., Loginov Yu.Yu., Mozzherin A.V.
Журнал: Siberian Aerospace Journal @vestnik-sibsau-en
Рубрика: Technological processes and material science
Статья в выпуске: 2 vol.23, 2022 года.
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The reliability of electronic equipment, including in the aerospace industry, both under normal and extreme conditions, is associated with the degradation of materials due to the formation and development of a defective network. Cadmium telluride is one of the semiconductors that is actively used in the creation of solar cells and modern microelectronic devices. In this paper, the model of the point defects distribution in cadmium telluride before exposure to any ionizing radiation is proposed, that made it possible to calculate the effective thermal activation energy of a Frenkel pair equal to 1.37 eV. Studies of the features of the defects formation and evolution using modeling methods in cadmium telluride, in the future, will improve the quality of its technological use, saving financial resources and increasing the reliability of products.
Cadmium telluride, dynamics of structural defects, thermal activation energy
Короткий адрес: https://sciup.org/148329629
IDR: 148329629 | DOI: 10.31772/2712-8970-2022-23-2-315-320
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