Physico-chemical bases cultivation variable-gap semiconductor solid solution Si1-xGex from the liquid phase
Автор: Razzakov Alijon, Matnazarov Anvar, Latipova Muborak, Japakov Azamat
Журнал: Бюллетень науки и практики @bulletennauki
Рубрика: Химические науки
Статья в выпуске: 9 т.6, 2020 года.
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Single-crystal films of a graded-gap solid solution Si1-xGex (0 1-xGex solid solution was studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are given.
Epitaxy, crystallization, solution-melt, solid solution, dislocation, substrate, sedimentation, dispersed phase, dispersion medium, ultramicroheterogeneous, cluster
Короткий адрес: https://sciup.org/14117869
IDR: 14117869 | DOI: 10.33619/2414-2948/58/01
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