Photoelectrical properties of structure with micro- and nano-porous silicon
Автор: Latukhina N.V., Dereglazova T.S., Ivkov S.V., Volkov A.V., Deeva V.A.
Журнал: Известия Самарского научного центра Российской академии наук @izvestiya-ssc
Рубрика: Физика и электроника
Статья в выпуске: 3-1 т.11, 2009 года.
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Photoelectrical properties of structure with surface sensitive lay of different type porous silicon were investigated. Spectral dependences of reflectivity for 400ч927 nm wavelength and short circuit current for 400ч1000 nm wavelength were determined. As represented spectral range widen to short wavelength in comparison with single-crystal silicon.
Porous silicon, textured surface, deep anodic etching, spectral dependence, photosensitivity, reflection coefficient, short circuit current
Короткий адрес: https://sciup.org/148198628
IDR: 148198628
