Generation-recombination noise in the semiconductors
Автор: Yakubovich B.I.
Журнал: Научное приборостроение @nauchnoe-priborostroenie
Рубрика: Исследования физических явлений
Статья в выпуске: 4 т.23, 2013 года.
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Generation-recombination noise in the semiconductors, caused by generation-recombination processes through the allowed levels in the forbidden band is considered. The quantitative description of noise is given. The spectrum of generation-recombination noise in general case is calculated. The obtained results can be applied for development of semiconductor devices: for decrease of noise and improvement of characteristics of devices.
Noise, fluctuations, semiconductors, semiconductor devices
Короткий адрес: https://sciup.org/14264892
IDR: 14264892