Generation-recombination noise in the semiconductors

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Generation-recombination noise in the semiconductors, caused by generation-recombination processes through the allowed levels in the forbidden band is considered. The quantitative description of noise is given. The spectrum of generation-recombination noise in general case is calculated. The obtained results can be applied for development of semiconductor devices: for decrease of noise and improvement of characteristics of devices.

Noise, fluctuations, semiconductors, semiconductor devices

Короткий адрес: https://sciup.org/14264892

IDR: 14264892

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