InAs/Si based heterostructures as the component technology for new generation nano- and optoelectronic devices

This paper presents a summary of experimental results obtained at the Institute of Analytical Instrumentation RAS in association with A.F. Ioffe Physicotechnical Institute RAS on MBE forming of InAs/Si quantum -dimensional heterostructures, including those with quantum dots, and their studies by RHEED, STM, SEM, TEM, XMA and PL techniques for new generation opto- and microelectronics devices to combine the application of A3B5 and silicon technologies.