Chemical-mechanical polishing. Part II. Model of local interactions
Автор: Goldstein Robert Veniaminovich, Osipenko Nikolay Michailovich
Статья в выпуске: 3, 2011 года.
Бесплатный доступ
On the base of the analytical review of the current state of the theory and problems of Chemical - mechanical polishing (CMP) modeling some approaches were suggested to the problem accounting for the complex of the phenomena of different scales determining the polishing rate such as diffusion of slurry into the surface layer and restriction of time of chemical treatment of the surface by a rough pad being under the action of a mechanical load. A model of the CMP process was developed. Within the framework of this model a dependence of the polishing rate on the loading parameters was derived. The dependence generalizes the empirical Preston law.
Chemical-mechanical polishing, abrasive, liquid, planarization, model
Короткий адрес: https://sciup.org/146211386
IDR: 146211386