Using solubility parameter for selection of solvents for thermo-processed polymer positive photoresist masks applied in “lift-off” photolithography

The solubility parameter for positive photoresist based on novolac resins and ortho-naphthoquinone diazides was determined. The solubility parameter was used to study the solubility of photoresists in conventional and “lift-off” (reverse) photolithography. The influence of the presence of hydrogen bonds on the change of the value of the solubility parameters was studied. The change in the photoresist solubility parameter was calculated at exposure to UV light. The criteria for the selection of the developer compositions for positive photoresists for implementation of ″lift-off″ (reverse) photolithography were developed.