Application of irradiated silicon acoustic emission signal for tuning defectoscopes in construction engineering

Article presents the results of researches of microstructure formation process, spot and continual defects in gamma-irradiated semiconductor - monochrystalline silicon - using ultrasonic method. It was revealed that the staging of the process depends on the dose of radiation and exposure period. Migration of microstructures and radiation defects were discovered at the most intensive stage of crystal deformation strengthening after stopping of radiation influence. It was shown that migration causes anomalous changes in inner friction (Q-1) and spectrum of acoustic emission (AE). For the first time rise of acoustic signal was determined in given material. The mechanisms of the emergence of unsteady micro(nano)- structures, origins of their radiation and temporary dynamics, possibility of using emergence of acoustic and emission signal in irradiated silicon for tuning defectoscopes in construction engineering were analyzed.