Study of dielectric properties of thin aluminium oxide layers grown by atomic layer deposition

Dielectric properties of MIS-structures based on aluminium oxide layers obtained by atomic layer deposition (ALD) are experimentally investigated for the first time. The value of dielectric parameters for Al2O3 layers of two thicknesses is determined. It is found that the dielectric relaxation in studied structures is defined by the contribution of dipole and interfacial polarization. The temperature and frequency dependence of conductivity indicates the existence of thermally activated hopping mechanism of charge transport with activation energy ΔЕ = (0,15-0,30 ± 0,01).