Solid body and liquid superficial structure study by ellipsometry considering mathematical inverse problem incorrectness. Part 3. On the determination of all the parameters of semiconductors with superthin oxide films on the basis of the real experiment

The work is devoted to the further development of the method of progressive approximation in the solution of mathematically incorrect ellipsometry inverse problem for the semiconductors with superthin oxide films. The main task is development of the additional procedure providing the choice of the only solution. The procedure directing convergence process to optimum parameter values mostly approximate to their true values is discussed. This improvement of the method is made on the basis of the real experiment. For this purpose measurements made on the sample of gallium arsenide in several point of the sample were used. Important data concerning heterogeneity of such samples along their surface and associated with the character of sample treatment were obtained. Certification method of semiconductors surface due to certain signs which are not associated with the presence of the expressed damaged layer was questioned.