Research of ReRAM element prototype based on nonstoichiometric anode oxide films of niobium
Автор: Kuroptev V.A., Putrolaynen V.V., Stefanovich G.B.
Журнал: Ученые записки Петрозаводского государственного университета @uchzap-petrsu
Рубрика: Физико-математические науки
Статья в выпуске: 8 (129) т.1, 2012 года.
Бесплатный доступ
He article is concerned with the results of development and research of ReRAM element prototype (memristor) based on bipolar resistive switching in nonstoichiometric anodic oxide films of niobium. High practical importance and promising outlook of this effect for ReRAM development have been established.
Элементы reram, reram elements, bipolar resistive switching, anodic niobium oxides
Короткий адрес: https://sciup.org/14750336
IDR: 14750336
Статья научная
