Influence of lithium concentration on the diffusion rate in crystalline silicon
Автор: Popov Z.I., Fedorov A.S., Kuzubov A.A., Eliseeva N.S.
Журнал: Сибирский аэрокосмический журнал @vestnik-sibsau
Рубрика: Технологические процессы и материалы
Статья в выпуске: 2 (48), 2013 года.
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Influence of concentration of lithium on the height of the potential junction barrier of lithium atoms in crystalline silicon was investigated with quantum-chemical DFT method. Using this data, a new method for calculation of lithium diffusion in crystalline silicon was proposed, with different concentrations of lithium SiLi x where x ranges from 0,05 to 0,75.
Silicon, lithium, ab initio calculations, diffusion
Короткий адрес: https://sciup.org/148177064
IDR: 148177064
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