Study of the influence of the position of the Fermi level on the photoconductivity of single crystalline silicon Si С

This work is devoted to the study of the spectral dependence of the photoconductivity of single-crystal silicon Si with different concentrations of boron and phosphorus doped with manganese atoms on the position of the Fermi level. The study is a continuation of the study of the influence of multiply charged centers on the lifetime of charge carriers in silicon with multiply charged centers, carried out by the author of the article.