The influence research of temperature deformation on pressure coefficient of resistance of the SmS thin polycristalline films

The article presents the results of the researches, dedicated to the temperature dependence of the pressure electrical resistivity coefficient (PRC) of the baroresistor on the slick surface of the samarium monosulphide (SmS) at the glass substrate (SiO 2) within the range of 77–350 K. The feature of a sharp maximum is observed throughout the temperature dependence of the module PRC. This maximum can be explained by the conduction electron growing activity from the donor level, which energy depends on the temperature deformation, appearing as the result of the temperature coefficients differences between linear dilatation of the of the film and glass substrate. Energy calculation is indicated according to the donor level. Upon the article research results we can determine the appropriate for the technical usage tenso- and baroresistor low temperature running limit on the SmS films equal to the ~150 K.