MANUFACTURING AND RESEARCH OF METAL OXIDE SEMICONDUCTOR GAS SENSORS FOR AMMONIA

Автор: M. V. Duykova , S. E. Shkonda , S. A. Kazakov , M. A. Grevtsev

Журнал: Научное приборостроение @nauchnoe-priborostroenie

Рубрика: Физика приборостроения

Статья в выпуске: 4 т.30, 2020 года.

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Ammonia-sensitive materials based on tin dioxide have been developed and synthesized. The degree of structural defects was evaluated, and the acid-base surface centers of synthesized materials were studied using the indicator method. The relationship between the chemisorption properties of synthesized gas-sensitive sensor layers (gas response to the concentration effect of ammonia) and the structure of the sensor material is discovered and analyzed. The novelty of the research is the integrated approach presented in this paper to the creation, development and manufacture of sensors for ammonia by synthesizing a material with pre-set properties using several methods of surface modernization simultaneously.

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Gas analyzer, semiconductor sensor, ammonia detection, chemisorption, defective structure, x-ray diffraction analysis

Короткий адрес: https://sciup.org/142224615

IDR: 142224615   |   DOI: 10.18358/np-30-4-i5262

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