Изменение магнитосопротивления в халькогенидах марганца MnSe1-xTex при переходе от объемных образцов к тонкопленочным

Изменение магнитосопротивления в халькогенидах марганца MnSe1-xTex при переходе от объемных образцов к тонкопленочным

Автор: Аплеснин С.С., Янушкевич К.И.

Журнал: Сибирский аэрокосмический журнал @vestnik-sibsau

Рубрика: Технологические процессы и материалы

Статья в выпуске: 2 т.21, 2020 года.

Бесплатный доступ

Исследованы электрические и оптические свойства анион-замещенных антиферромагнитных полупроводников MnSe1-ХTeХ (0,1 ≤ Х ≤ 0,4) в области температур 77-300 К и магнитных полей до 13 кЭ в объемных образцах и поликристаллических тонких пленках. В твердых растворах MnSe1-ХTeХ обнаружено отрицательное магнитосопротивление в окрестности температуры Нееля для Х = 0,1 и для состава с Х = 0,2 в парамагнитной области до 270 К. Установлена корреляция спин-стекольного состояния и магнитосопротивления для Х = 0,1 и 0,2. Измерены спектры оптического поглощения в интервале частот 2000 cm-1

Халькогениды марганца, магнитосопротивление, проводимость, тонкие пленки, вах

Короткий адрес: https://sciup.org/148321972

IDR: 148321972   |   DOI: 10.31772/2587-6066-2020-21-2-254-265

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