Experimental investigation of semiconductor structures of the power source based on carbon-14
Автор: Chepurnov V.I., Puzyrnaya G.V., Gurskaya A.V., Dolgopolov M.V., Anisimov N.S.
Журнал: Физика волновых процессов и радиотехнические системы @journal-pwp
Статья в выпуске: 3 т.22, 2019 года.
Бесплатный доступ
The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a photo-EMF to confirm the efficiency of p-n junction, an evaluation of the effectiveness of the introduction of carbon-14 in the molecule silicon carbide electrophysical measurements. In the process used the technology of solid-phase transformation of the surface of the monocrystalline silicon substrate in the phase of monocrystalline silicon carbide by chemical transport of carbon in the environment of hydrogen.
Гетероструктура por-sic/si, p-n-переход, micro- and nanoelectronics, devices on quantum effects, betavoltaics, beta converter, carbon-14, heterostructure por-sic/si, endotoxemia, silicon carbide, p-n junction, metallization of the contact pads, solid-phase diffusion, solid-phase transformations, materials technology
Короткий адрес: https://sciup.org/140256105
IDR: 140256105
