Electrical and photoelectric properties of pc-Si: H films

Автор: Nalgiyeva M.A., Ozdoeva P.B.

Журнал: Мировая наука @science-j

Рубрика: Естественные и технические науки

Статья в выпуске: 3 (24), 2019 года.

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Advances in the study and the formation of thin-film solar components led to the creation of thin-film solar cells formed on flexible substrates. Among the various semiconductor materials used for this purpose, one of the main zones is captured by protocrystal hydrogenated silicon, whose composition consists of an amorphous silicon matrix including nanocrystalline inclusions. The paper presents information on the properties of films of hydrogenated silicon, the circumstances of obtaining protocrystal silicon. The article presents a new approach to the concept of the properties of pc-Si: H films and presents their electrical and photoelectric properties in a new way.

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Films, protocrystal, hydrogenated, silicon, concentration, nanocrystal

Короткий адрес: https://sciup.org/140264327

IDR: 140264327

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