Electrophysical and optical properties of the silicon carbide device structures

The results of the research of silicon carbide thin films obtained by high-frequency magnetron sputtering on various types substrates are presented. The surface morphology of silicon carbide was studied by scanning electron microscopy. Surface roughness was measured using a profilometer. The phase composition and structural perfection of the films were determined by x-ray phase analysis and Raman scattering. The method of silicon carbide layers optical parameters calculation based on experimentally obtained spectra of natural light normal reflection from the structure and from the substrate is developed. The refractive index, extinction coefficient and specific conductivity of silicon carbide films are calculated depending on the wavelength of the incident light.