The electron microscopic study of the defect formation in the doped single crystals CdTe, ZnS and ZnSe

The structural defects formation in the doped and not doped semiconductors CdTe, ZnS and ZnSe grown from the gas phase were investigated by transmission electron microscopy. 1t is found that the annealing of doped semiconductors leads to the formation of impurity precipitates at the grown-in dislocations and stacking faults, that leads to dislocation migration. The precipitate formation at the growth defects due to the migration of point defects and impurities on the dislocation with the formation of a supersaturated solid solution which is condensed in the form of precipitates containing dopant. The content of impurities in precipitates is confirmed by the local electron probe microanalysis.