To the selection of the method of controlling the distribution of impregnation concentrations in the production of power semiconductor instruments

The article is devoted to the determination of the most suitable element analysis method for controlling the distribution of dopant concentrations in power semiconductor wafers. The article describes an experiment to determine the mass of alloying impurities in a diffusion composition, an analysis of the mechanism of diffusion of an impurity from a thin film into a silicon wafer, calculation of the mass concentrations of dopant impurities in power semiconductor wafers after the process of "deep diffusion." Comparison and selection on the basis of the work performed the most suitable method of elemental analysis.