Concentration of single defects in the Si-phase including SiC-phase, formation of endotaxe method of semiconductor heterostructure

Heteroepitaxy layers of silicone carbide on silicone substrate is one of the most perspective material for the high-temperature- and nuclear-proof electronics. Solidphase process of endotaxy of silicon carbide is supported by Si-phase turning into SiC-phase chemically taking place in the atmosphere of hydrogen and hydrocarbon under the temperature range of 1360 to 1380 °C and under normal atmospheric pressure. All the system of.solidphase process assumes single defect formation, caused by natural growth processes, affected by processes of another origin, caused by doped, for example.The aim of this research is to analyse all the opportunities of the guidance and the forecasting of this system behaviour. Besides, the concentration of thermal point defects of various origin on silicone substrate depending on the type of its current under the circumstances of isovalent doped of carbon has been theoretically studied in this article.