KINETICS OF CONDUCTIVITY OF n-TYPE SEMICONDUCTOR METAL OXIDE FILMS DURING CHEMOSORPTION OF OXIDIZING GASES
Автор: S. A. Kazakov, M. A. Grevtsev, I. E. Jagatspanyan, A. O. Volchek
Журнал: Научное приборостроение @nauchnoe-priborostroenie
Рубрика: Физика приборостроения
Статья в выпуске: 1, 2024 года.
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The article considers a model of chemisorption of acceptor particles on the surface of n-type metal oxide semiconductors. An expression is obtained for the dimensionless electrical conductivity as a function of the concentration of the detected microimpurity. It has been shown that the adsorption value is proportional to the analyte concentration in the gas phase.
Adsorption, surface, electrical conductivity, metal oxide semiconductor, concentration, defective structure
Короткий адрес: https://sciup.org/142240140
IDR: 142240140
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