KINETICS OF CONDUCTIVITY OF n-TYPE SEMICONDUCTOR METAL OXIDE FILMS DURING CHEMOSORPTION OF REDUCING GASES
Автор: S. A. Kazakov, M. A. Grevtsev, I. E. Jagatspanyan, A. O. Volchek
Журнал: Научное приборостроение @nauchnoe-priborostroenie
Рубрика: Физика приборостроения
Статья в выпуске: 2, 2024 года.
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The article examines the kinetics of adsorption of reducing gases on the surface of metal oxide semiconductor gas-sensitive films of n-type conductivity. It is shown that their sensitivity is, to a first approximation, proportional to the concentration of the detected impurity. This work is a continuation of a previously published study that examined the chemisorption of oxidizing gases on the surface of an n-type semiconductor.
Adsorption, surface, electrical conductivity, metal oxide semiconductor, concentration, defective structure
Короткий адрес: https://sciup.org/142240255
IDR: 142240255
