Application of scanning capacitance microscopy to large-scale samples

Бесплатный доступ

In this paper we discuss the application of scanning capacitance microscopy (SCM) for high spatial resolution investigation of dopant concentration in semiconductors on large-scale planar samples with rough topography. SCM method and apparatus allowing to reduce the influence of stray capacitance changes during scanning process more than ten times compared to known techniques are developed. Corresponding experimental results are presented.

Scm, capacitance microscopy, stray capacitance, afm, spm

Короткий адрес: https://sciup.org/14264611

IDR: 14264611

Статья научная