Ellipsometric control of surface temperature changes of semiconductor materials in vacuum

Тhе temperature dependences for ellipsometric parameters оf optically polished samples of semiconductor materials at various stages of clearing from the adsorbed gases and remains of oxides are obtained. The cleaning was done by high heating in super-high vacuum. The established direct proportional dependence of the ellipsometric parameter Ψ on temperature for Si(111) monocrystals proves the effectiveness of the ellipsometric method in its unconventional use, that is for contactless measurement of temperature changes of semiconductor materials in vacuum. The results are discussed.