Magnetoimpedance in thulium manganese chalcogenide
Автор: Kharkov A.M., Sitnikov M.N., Aplesnin S.S.
Журнал: Siberian Aerospace Journal @vestnik-sibsau-en
Рубрика: Technological processes and material science
Статья в выпуске: 4 vol.25, 2024 года.
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Control of transport characteristics under the influence of a magnetic field is promising from the point of view of creating magnetic field sensors resistant to radiation. The impedance and its components in thulium manganese chalcogenide in the frequency range of 102–106 Hz are studied. The temperature range with a prevailing contribution of the reactive and active parts of the impedance is found. The impedance components are described in the Debye model. When manganese is replaced by thulium ions, the frequencies of the maxima of the imaginary component of the impedance shift toward high frequencies in manganese selenide by two orders of magnitude. With an increase in the concentration of substitution by thulium ions in selenides, two relaxation times are found, compared with sulfides. The activation nature of the relaxation time, the activation energy from the concentration of thulium ions are found. An increase in impedance in a magnetic field in the region of low concentrations and a change in the sign of the impedance with temperature for high concentrations are established. Magnetoimpedance in chalcogenides passes through a maximum when heating the samples. The increase in impedance in a magnetic field is due to a change in the diagonal component of the permittivity in a magnetic field, which is proportional to the conductivity. A positive value of magnetoimpedance is described in the model of an electrically inhomogeneous medium. From the impedance, information can be obtained about the electrical inhomogeneity of the material.
Semiconductors, magnetoimpedance, Debye model
Короткий адрес: https://sciup.org/148329764
IDR: 148329764 | DOI: 10.31772/2712-8970-2024-25-4-531-538
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