Mathematical model of degraded destruction of contact connections of the semi%conductor device

The mathematical model of destruction of contact connections of the semi-conductor device while in service, based on kinetic thermofluctuation theory of a failure of solids. As a result of the joint decision of a stationary problem of heat conductivity and the kinetic equation describing process of disintegration of nuclear connections in the field of contact, the dependencies of longevity of work of considered contact connection of the powerful bipolar transistor from scattered power by semi-conductor structure for various values of parameters of model are found.