The method of scanning tunneling microscopy in the study of the electrical properties of the surface of impurity silicon

The review article describes the work on the study of impurity silicon using scanning tunneling microscopy (STM). Today, the study and comparison of electrical properties on the surface of impurity silicon at the macro and micro levels is important for the creation of photovoltaic cells and electronic devices. Works on studying the surface potential, conductivity, p-n junction, structure and defects of impurity silicon were presented.