A procedure for pulse measurements of specific and surface resistance of semiconductor films and wafers

Автор: Naumov V.V., Grebenshchykov O.A.

Журнал: Научное приборостроение @nauchnoe-priborostroenie

Рубрика: Оригинальные статьи

Статья в выпуске: 4 т.11, 2001 года.

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The paper describes a technique for automated measurements of specific and surface resistances of semiconductor films and wafers 0.2 to 400 μm thick of any configuration by the Van-der-Pau method in a pulse mode using an IBM PC personal computer, digital voltmeters В7-21А, program controlled pulse generator, sample-and-hold device, programmed switch and adapter-multiplexer. It provides automatic switching of probe contacts, programmed setting of voltage and current pulses from 10 to 40 μs, measurement of surface resistance in the range of 0.05 to 22·10^6 Om and specific resistance in the range of 2·10^−3 to 10^6 Om·cm at a thickness of 400 μm with data output onto a monitor and printer. The error of resistance measurement is ≤ 0.8 %.

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Короткий адрес: https://sciup.org/14264208

IDR: 14264208

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