Models of particularity of heat resistance of crystals with phase transition and defects
Автор: Altukhov V.I., Kazarov B.A., Balandina N.V., Timchenko О.V.
Журнал: Известия Самарского научного центра Российской академии наук @izvestiya-ssc
Рубрика: Физика
Статья в выпуске: 3 т.9, 2007 года.
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In work presented results of development of methods of description of mechanisms of diffusing an phonons and mathematical modeling of particularities heat (transport) characteristics of crystals with defects, admixtures and structured phase transition (Hg2Cl2 and semiconductors А2В6 - ZnSe:Ni). Conducted evaluation of dynamic critical factor for ferroelectrics-semiconductors SnTe and GeTe; offered model of effect of beating for interpreting the particularities of heat resistance Hg2Cl2 near the temperature of phase transition Тс; given explanation to the effect gigantic resistance in doping crystals ZnSe:Ni.
Короткий адрес: https://sciup.org/148197986
IDR: 148197986
