Modeling of the energy spectrum of state density in strongly doped semiconductors

Strong doping with impurities at deep levels broadens the conduction band and the valence band. This increases the absorption of light below the red border. Consequently, a possible change in the width of the band gap. In the present paper, the influence of doping with a high concentration on the width of the forbidden band of a semiconductor was studied using a mathematical model, the temperature dependence of the density of state spectrum. The absorption in the range 0.6-0.9 eV for silicon is explained.