High-power laser diodes emitting at 808 nm. 3. Ways to increase the optical output power

Автор: Demidov D.M., Ter-martirosyan A.L., Bulashevich K.A., Khokhlev O.V., Karpov S. Yu.

Журнал: Научное приборостроение @nauchnoe-priborostroenie

Рубрика: Приборы и устройства

Статья в выпуске: 2 т.23, 2013 года.

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This work continues the reviews on the mechanisms limiting the output optical power of semiconductor laser diodes reported in [1, 2]. Here we consider possible ways for improving the optical power. Among them, the most effective ways are the use of large-optical cavity heterostructures, advanced coating of the laser resonator mirrors, and improving the heat sink of the laser diodes. Specific approaches suggested in each of the above directions are discussed in the paper. Assessment of the effectiveness and/or potential of the approaches is given as well.

Semiconductor lasers, laser diodes, optical power, catastrophic optical damage, thermal effects, carrier accumulation, carrier life time, stimulated emission

Короткий адрес: https://sciup.org/14264853

IDR: 14264853

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