The method of increasing the density of elements in schemes OR and NOR, formed on the basis of field heterotransistor
Автор: Pankratov E.L., Bulaeva E.A.
Журнал: Международный журнал гуманитарных и естественных наук @intjournal
Рубрика: Физико-математические науки
Статья в выпуске: 3-1 (6), 2017 года.
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This work analyses the possibility of increasing the density of elements in schemes or Not and, formed on the basis of field heterotransistor. A method of increasing the density of the elements under consideration, based on the shape of the heterostructure under a specific configuration, the doping of necessary sites by diffusion and ion implantation and optimization of annealing of the impurities and/or radiation defects. A comparative analysis of the formation of these transistors by diffusion and ion implantation.
Схема nor, схема or, field heterotransistor, the scheme and the scheme or optimization of formation, analytical method for the analysis of mass transfer
Короткий адрес: https://sciup.org/170190323
IDR: 170190323