Background properties of Si-detector, due to electron transport and charge yield
Автор: Portnoy A. Yu., Pavlinsky G.V., Gorbunov M.S., Sidorova Yu. I.
Журнал: Научное приборостроение @nauchnoe-priborostroenie
Рубрика: Приборные иследования и разработки для разных областей
Статья в выпуске: 4 т.21, 2011 года.
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Influence of a detector dead layer on the form of the calculated function the Si detector was evaluated. Within the range of energies lower than the energy of the registered radiance, a role of a dead layer of the detector and features of the form of function of the response of the detector are considered.
Si-детектор, si detector, detector response function, incomplete charge yield, dead layer, signal to background ratio
Короткий адрес: https://sciup.org/14264749
IDR: 14264749
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