EQUIPMENT FOR MOCVD EPITAXY OF GALLIUM NITRIDE ON SILICON SUBSTRATES UP TO 200 mm IN DIAMETER FOR THE PRODUCTION OF TRANSISTOR HETEROSTRUCTURES
Автор: M. G. Biryukov, P. E. Afonin, S. A. Shchurenkova, D. Y. Pugachev, A. F. Tsatsulnikov, A. V. Sakharov, E. E. Zavarin, W. V. Lundin, D. S. Bazarevski
Журнал: Научное приборостроение @nauchnoe-priborostroenie
Рубрика: Разработка приборов и систем
Статья в выпуске: 3, 2025 года.
Бесплатный доступ
The advantages of using III-N GaN heterostructures on silicon substrates are considered. The general design, methods for optimizing the deposition process and key characteristics of the developed equipment for metalorganic chemical vapour deposition (MOCVD) for the implementation of basic technological processes on silicon substrates with a diameter of up to 200 mm for the production of transistor heterostructures are presented. The results of the implemented basic technological processes are shown.
MOCVD system, transistor heterostructure, gallium nitride on silicon, modeling, basic technological processes
Короткий адрес: https://sciup.org/142245619
IDR: 142245619
